S5MHE3_A/H
Vishay General Semiconductor - Diodes Division
Deutsch
Artikelnummer: | S5MHE3_A/H |
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Hersteller / Marke: | Vishay General Semiconductor – Diodes Division |
Teil der Beschreibung.: | DIODE GEN PURP 1KV 5A DO214AB |
Datenblätte: |
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RoHs Status: | ROHS3 -konform |
ECAD -Modell: | |
Zahlungsmittel: | PayPal / Credit Card / T/T |
Versandweg: | DHL / Fedex / TNT / UPS / EMS |
Aktie: |
Ship From: Hong Kong
Anzahl | Einzelpreis |
---|---|
1+ | $0.54 |
10+ | $0.464 |
100+ | $0.3461 |
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
Produkteigenschaften | Eigenschaften |
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Spannung - Forward (Vf) (Max) @ If | 1.15 V @ 5 A |
Spannung - Sperr (Vr) (max) | 1000 V |
Technologie | Standard |
Supplier Device-Gehäuse | DO-214AB (SMC) |
Geschwindigkeit | Standard Recovery >500ns, > 200mA (Io) |
Serie | Automotive, AEC-Q101 |
Rückwärts-Erholzeit (Trr) | 2.5 µs |
Verpackung / Gehäuse | DO-214AB, SMC |
Produkteigenschaften | Eigenschaften |
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Paket | Tape & Reel (TR) |
Betriebstemperatur - Anschluss | -55°C ~ 150°C |
Befestigungsart | Surface Mount |
Strom - Sperrleckstrom @ Vr | 10 µA @ 1000 V |
Strom - Richt (Io) | 5A |
Kapazität @ Vr, F | 40pF @ 4V, 1MHz |
Grundproduktnummer | S5M |
S5MHE3_A/H Einzelheiten PDF [English] | S5MHE3_A/H PDF - EN.pdf |
S5ML MCC
DIODE GEN PURP 1KV 1.6A DO214AB
DIODE GEN PURP 1KV 5A DO214AB
5A, 1000V, STANDARD RECOVERY REC
DIODE GP 1KV 1.6A DO214AB
DIODE GEN PURP 1KV 5A SMC
DIODE GEN PURP 1KV 5A DO214AB
DIODE GEN PURP 1KV 5A DO214AB
DIODE GEN PURP 1KV 5A SMC
DIODE GEN PURP 1KV 1.6A DO214AB
DIODE GEN PURP 1KV 5A DO214AB
DIODE GEN PURP 1KV 5A DO214AB
DIODE GEN PURP 1KV 5A DO214AB
DIODE GEN PURP 1KV 5A SMC
DIODE GEN PURP 1KV 5A DO214AB
DIODE GP 1KV 1.6A DO214AB
DIODE GEN PURP 1KV 1.6A DO214AB
DIODE GEN PURP 1KV 5A DO214AB
DIODE GEN PURP 1KV 5A SMC
5A, 1000V, STANDARD RECOVERY REC
2025/01/15
2024/07/2
2024/05/30
2024/09/9
S5MHE3_A/HVishay General Semiconductor - Diodes Division |
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